Part Number IKB30N65ES5ATMA1 Categories IGBT Transistors RoHS Datasheet IKB30N65ES5ATMA1 Description IGBT Transistors INDUSTRY 14
Categories IGBT Transistors Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.35 V Configuration Single Continuous Collector Current at 25 C 62 A Continuous Collector Current Ic Max 62 A Gate-Emitter Leakage Current 100 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-263-3 Packaging Reel Packaging Cut Tape Part # Aliases Pd - Power Dissipation 188 W Product Type IGBT Transistors Technology SI