IKB30N65ES5ATMA1

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Specifications

Categories
IGBT Transistors
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.35 V
Configuration
Single
Continuous Collector Current at 25 C
62 A
Continuous Collector Current Ic Max
62 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
188 W
Product Type
IGBT Transistors
Technology
SI

Latest Reviews

everything as it is written in the description of the same deductible prodovtsu deserved

packed pretty good, all is ok,-seller.

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Everything is fine!

I received the product right, thank you very much 2018/12/03 ★★★★★

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