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IKB30N65EH5ATMA1

IKB30N65EH5ATMA1
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Part Number
IKB30N65EH5ATMA1
Categories
IGBT Transistors
RoHS
Datasheet
Description
IGBT Transistors Infineon s 650 V, 30 A hard-switching TRENCHSTOP 5 IGBT in a TO263 D2Pak package, redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for h
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Specifications

Categories
IGBT Transistors
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.65 V
Configuration
Single
Continuous Collector Current at 25 C
55 A
Continuous Collector Current Ic Max
55 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
188 W
Product Type
IGBT Transistors
Series
650V TRENCHSTOP 5
Technology
SI
Tradename
TRENCHSTOP

Porduct Category

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Latest Reviews

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Everything as it is written in the description of the same deductible prodovtsu deserved 5
Yes, they are all here. :)
Hello! Order received, very happy. Thank you very much!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
High Quality driver, works excellent. It came to Moscow for 7 days.
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