Part Number DN0150ADJ-7 Categories Bipolar Transistors - BJT RoHS Datasheet DN0150ADJ-7 Description Bipolar Transistors - BJT BIPOLAR SMALL SIGNAL NPN/NPN
Categories Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 50 V Configuration Dual DC Collector/Base Gain hfe Min 120 DC Current Gain hFE Max 120 at 2 mA, 6 V Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 60 MHz Height 0.45 mm Length 1 mm Maximum DC Collector Current 0.1 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SOT-963-6 Packaging Reel Pd - Power Dissipation 300 mW Product Type BJTs - Bipolar Transistors Series DN0150 Technology SI Transistor Polarity NPN Width 0.8 mm