DN0150ADJ-7

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Specifications

Categories
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
50 V
Configuration
Dual
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
120 at 2 mA, 6 V
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
60 MHz
Height
0.45 mm
Length
1 mm
Maximum DC Collector Current
0.1 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SOT-963-6
Packaging
Reel
Pd - Power Dissipation
300 mW
Product Type
BJTs - Bipolar Transistors
Series
DN0150
Technology
SI
Transistor Polarity
NPN
Width
0.8 mm

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