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DN0150ALP4-7

DN0150ALP4-7
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Specifications

Categories
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
50 V
Configuration
Single
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
120 at 2 mA, 6 V
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
60 MHz
Height
0.35 mm
Length
1 mm
Maximum DC Collector Current
0.1 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
DFN-3
Packaging
Reel
Pd - Power Dissipation
450 mW
Product Type
BJTs - Bipolar Transistors
Series
DN0150
Technology
SI
Transistor Polarity
NPN
Width
0.6 mm

Porduct Category

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Latest Reviews

Write Your Own Reivew
Decent quality, not минвелл certainly, but enough decent
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Seems well have not tested
I received the product right, thank you very much 2018/12/03 ★★★★★
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