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TK20C60W,S1VQ

TK20C60W,S1VQ
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Part Number
TK20C60W,S1VQ
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
6 ns
Height
10.4 mm
Id - Continuous Drain Current
20 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-262-3
Pd - Power Dissipation
165 W
Product Type
MOSFET
Qg - Gate Charge
48 nC
Rds On - Drain-Source Resistance
130 mOhms
Rise Time
25 ns
Series
TK20C60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
4.5 mm

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Latest Reviews

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Teşekkürler
Quickly came to CET, all in one package. Look at the rules
packed pretty good, all is ok,-seller.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
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