- Part Number
- TK10J80E,S1E
- Categories
- MOSFET
- RoHS
- Datasheet
- Description
- MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN
TK10J80E,S1E
Images are for reference only
Specifications
- Categories
- MOSFET
- Channel Mode
- Enhancement
- Configuration
- Single
- Fall Time
- 35 ns
- Height
- 20 mm
- Id - Continuous Drain Current
- 10 A
- Length
- 15.5 mm
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-3PN-3
- Pd - Power Dissipation
- 250 W
- Product Type
- MOSFET
- Qg - Gate Charge
- 46 nC
- Rds On - Drain-Source Resistance
- 700 mOhms
- Rise Time
- 40 ns
- Series
- TK10J80E
- Technology
- SI
- Tradename
- MOSVIII
- Transistor Polarity
- N-Channel
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 140 ns
- Typical Turn-On Delay Time
- 80 ns
- Unit Weight
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Vgs - Gate-Source Voltage
- 30 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Width
- 4.5 mm
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Latest Reviews
Отличный продавец . Рекомендую.+++
Yuriy Iovlev
Perfectly.
Sensofar Tech, SL
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Works. Recommend
Rajiv
the photo in comparison with cheap. Delivery fast
Kaido Kevvai
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03/14/2023
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