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TK16E60W,S1VX

TK16E60W,S1VX
Images are for reference only
Part Number
TK16E60W,S1VX
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5 ns
Height
15.1 mm
Id - Continuous Drain Current
15.8 A
Length
10.16 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Pd - Power Dissipation
130 W
Product Type
MOSFET
Qg - Gate Charge
30 nC
Rds On - Drain-Source Resistance
160 mOhms
Rise Time
25 ns
Series
TK16E60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
4.45 mm

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Latest Reviews

Write Your Own Reivew
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Hello! Order received, very happy. Thank you very much!
Thank You all fine, packed very well
High Quality driver, works excellent. It came to Moscow for 7 days.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
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