RQ1E050RPTR

Images are for reference only
Part Number
RQ1E050RPTR
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET RECOMMENDED ALT 755-RF4E075ATTCR

Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Development Kit
-
Fall Time
50 ns
Forward Transconductance - Min
-
Id - Continuous Drain Current
5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TSMT-8
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
120 nC
Rds On - Drain-Source Resistance
31 mOhms
Rise Time
15 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
90 ns
Typical Turn-On Delay Time
10 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
4 V

Latest Reviews

all exactly and work. радиолюбителя useful set to, thank you)

Yes, they are all here. :)

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Seems well have not tested

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