RQ6E055BNTCR

Images are for reference only
Part Number
RQ6E055BNTCR
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET Nch 30V 5.5A Power MOSFET

Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
7 ns
Forward Transconductance - Min
3.4 S
Id - Continuous Drain Current
5.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-457-6
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Part # Aliases
Pd - Power Dissipation
1.25 W
Product Type
MOSFET
Qg - Gate Charge
8.6 nC
Rds On - Drain-Source Resistance
19 mOhms
Rise Time
12 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
16 ns
Typical Turn-On Delay Time
7 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V

Latest Reviews

Yes, they are all here. :)

packed pretty good, all is ok,-seller.

High Quality driver, works excellent. It came to Moscow for 7 days.

Works. Recommend

Good material. Great seller, efficient and insurance. Ok

Related keywords for RQ6E

  • RQ6E055BNTCR Integrated
  • RQ6E055BNTCR RoHS
  • RQ6E055BNTCR PDF Datasheet
  • RQ6E055BNTCR Datasheet
  • RQ6E055BNTCR Part
  • RQ6E055BNTCR Buy
  • RQ6E055BNTCR Distributor
  • RQ6E055BNTCR PDF
  • RQ6E055BNTCR Component
  • RQ6E055BNTCR ICs
  • RQ6E055BNTCR Download PDF
  • RQ6E055BNTCR Download datasheet
  • RQ6E055BNTCR Supply
  • RQ6E055BNTCR Supplier
  • RQ6E055BNTCR Price
  • RQ6E055BNTCR Data sheet
  • RQ6E055BNTCR Image
  • RQ6E055BNTCR Picture
  • RQ6E055BNTCR Inventory
  • RQ6E055BNTCR Stock
  • RQ6E055BNTCR Original
  • RQ6E055BNTCR Cheapest
  • RQ6E055BNTCR Excellent
  • RQ6E055BNTCR Lead free
  • RQ6E055BNTCR Specification
  • RQ6E055BNTCR Hot offers
  • RQ6E055BNTCR Break Price
  • RQ6E055BNTCR Technical Data