TK12A60W,S4VX

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Part Number
TK12A60W,S4VX
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC

Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5.5 ns
Height
15 mm
Id - Continuous Drain Current
11.5 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Pd - Power Dissipation
35 W
Product Type
MOSFET
Qg - Gate Charge
25 nC
Rds On - Drain-Source Resistance
300 mOhms
Rise Time
23 ns
Series
TK12A60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
85 ns
Typical Turn-On Delay Time
45 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
2.7 V
Width
4.5 mm

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