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TK11P65W,RQ

TK11P65W,RQ
Images are for reference only
Part Number
TK11P65W,RQ
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET Power MOSFET N-Channel
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5.5 ns
Height
2.3 mm
Id - Continuous Drain Current
11.1 A
Length
6.5 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Pd - Power Dissipation
100 W
Product Type
MOSFET
Qg - Gate Charge
25 nC
Rds On - Drain-Source Resistance
350 mOhms
Rise Time
23 ns
Series
TK11P65W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
85 ns
Typical Turn-On Delay Time
45 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
5.5 mm

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Latest Reviews

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Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Everything is excellent! recommend this seller!
Fast shippng. Good quality. I recomend this seller.
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
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