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R8010ANX

R8010ANX
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Part Number
R8010ANX
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET 10V Drive Nch MOSFET
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
25 ns
Forward Transconductance - Min
2.2 S
Height
4.8 mm
Id - Continuous Drain Current
10 A
Length
15.4 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
40 W
Product
MOSFET
Product Type
MOSFET
Qg - Gate Charge
62 nC
Rds On - Drain-Source Resistance
560 mOhms
Rise Time
54 ns
Series
R8010ANX
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
Power MOSFET
Typical Turn-Off Delay Time
97 ns
Typical Turn-On Delay Time
43 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3 V
Width
10.3 mm

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Latest Reviews

Write Your Own Reivew
thanks for resending, this item is good !
goods very well received very good quality
Takes 8 days to Japan. Good!
packed pretty good, all is ok,-seller.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
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