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TK17E65W,S1X

TK17E65W,S1X
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Part Number
TK17E65W,S1X
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET Power MOSFET N-Channel
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
6 ns
Height
15.1 mm
Id - Continuous Drain Current
17.3 A
Length
10.16 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Packaging
Tube
Pd - Power Dissipation
165 W
Product Type
MOSFET
Qg - Gate Charge
45 nC
Rds On - Drain-Source Resistance
170 mOhms
Rise Time
15 ns
Series
TK17E65W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
4.45 mm

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Latest Reviews

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Everything is excellent! recommend this seller!
Works. Find the price of this product is very good
Decent quality, not минвелл certainly, but enough decent
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Great product. Arrived ahead of time. Thank you
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