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SQ1563AEH-T1_GE3

SQ1563AEH-T1_GE3
Images are for reference only
Part Number
SQ1563AEH-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET N Ch 20Vds 8Vgs AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
17 ns, 20 ns
Forward Transconductance - Min
2.6 S, 1.5 S
Id - Continuous Drain Current
850 mA
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SOT-363-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
930 pC, 1 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
150 mOhms, 500 mOhms
Rise Time
21 ns, 22 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel, P-Channel
Transistor Type
1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time
20 ns, 28 ns
Typical Turn-On Delay Time
3 ns, 2 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
8 V
Vgs th - Gate-Source Threshold Voltage
450 mV, 1.5 V

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