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TK100L60W,VQ

TK100L60W,VQ
Images are for reference only
Part Number
TK100L60W,VQ
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF
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Specifications

Categories
MOSFET
Configuration
Single
Fall Time
125 ns
Height
26 mm
Id - Continuous Drain Current
100 A
Length
20 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-3PL-3
Pd - Power Dissipation
797 W
Product Type
MOSFET
Qg - Gate Charge
360 nC
Rds On - Drain-Source Resistance
15 mOhms
Rise Time
130 ns
Series
TK100L60
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
690 ns
Typical Turn-On Delay Time
230 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
5 mm

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Latest Reviews

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it is safe and sound all, thank you seller!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Long Service and Russia!
Good material. Great seller, efficient and insurance. Ok
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