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TK100S04N1L,LQ

TK100S04N1L,LQ
Images are for reference only
Part Number
TK100S04N1L,LQ
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
19 ns
Height
2.3 mm
Id - Continuous Drain Current
100 A
Length
6.5 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
100 W
Product Type
MOSFET
Qg - Gate Charge
76 nC
Rds On - Drain-Source Resistance
1.9 mOhms
Rise Time
8 ns
Series
TK100S04N1L
Technology
SI
Tradename
U-MOSVIII-H
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
80 ns
Typical Turn-On Delay Time
23 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
40 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
5.5 mm

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