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SQ4850EY-T1_GE3

SQ4850EY-T1_GE3
Images are for reference only
Part Number
SQ4850EY-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET 60V 12A 6.8W AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
9 ns
Forward Transconductance - Min
21 S
Height
1.75 mm
Id - Continuous Drain Current
12 A
Length
4.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SO-8
Packaging
MouseReel
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
6.8 W
Product Type
MOSFET
Qg - Gate Charge
30 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
17 mOhms
Rise Time
9 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
23 ns
Typical Turn-On Delay Time
7 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Width
3.9 mm

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