- Part Number
- IKB40N65EH5ATMA1
- Categories
- IGBT Transistors
- RoHS
- Datasheet
- Description
- IGBT Transistors 40A 650V TRENCHSTOP 5 fast H5 IGBT copacked with 40A Rapid 1 diode
IKB40N65EH5ATMA1
Images are for reference only
Specifications
- Categories
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 74 A
- Continuous Collector Current Ic Max
- 74 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-263-3
- Packaging
- Reel
- Packaging
- Cut Tape
- Part # Aliases
- Pd - Power Dissipation
- 250 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOP 5
- Technology
- SI
Porduct Category
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Latest Reviews
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Yes, they are all here. :)
sudheer kumar sirra
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
fast delivery
Mike Ibarra
the photo in comparison with cheap. Delivery fast
Kaido Kevvai
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