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TK12E80W,S1X

TK12E80W,S1X
Images are for reference only
Part Number
TK12E80W,S1X
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET N-Ch 800V 1400pF 23nC 11.5A 165W
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
11 ns
Id - Continuous Drain Current
11.5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Pd - Power Dissipation
165 W
Product Type
MOSFET
Qg - Gate Charge
23 nC
Rds On - Drain-Source Resistance
380 mOhms
Rise Time
40 ns
Series
TK12E80W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
130 ns
Typical Turn-On Delay Time
70 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3 V

Porduct Category

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Latest Reviews

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Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
it is safe and sound all, thank you seller!
Everything is excellent! recommend this seller!
Fast shippng. Good quality. I recomend this seller.
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