Part Number TK1K2A60F,S4X Categories MOSFET RoHS Datasheet TK1K2A60F,S4X Description MOSFET N-Ch TT-MOSIX 600V 35W 740pF 6A
Categories MOSFET Channel Mode Enhancement Configuration Single Fall Time 16 ns Id - Continuous Drain Current 6 A Maximum Operating Temperature + 150 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220SIS-3 Packaging Tube Pd - Power Dissipation 35 W Product Type MOSFET Qg - Gate Charge 21 nC Rds On - Drain-Source Resistance 1.2 Ohms Rise Time 16 ns Series TK1K2A60F Technology SI Tradename MOSIX Transistor Polarity N-Channel Typical Turn-Off Delay Time 65 ns Typical Turn-On Delay Time 35 ns Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 2 V