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TK17E80W,S1X

TK17E80W,S1X
Images are for reference only
Part Number
TK17E80W,S1X
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET N-Ch 800V 2050pF 32nC 17A 180W
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
7 ns
Id - Continuous Drain Current
17 A
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Pd - Power Dissipation
180 W
Product Type
MOSFET
Qg - Gate Charge
32 nC
Rds On - Drain-Source Resistance
250 mOhms
Rise Time
24 ns
Series
TK17E80W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
80 ns
Typical Turn-On Delay Time
58 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3 V

Porduct Category

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Latest Reviews

Write Your Own Reivew
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
High Quality driver, works excellent. It came to Moscow for 7 days.
The timer is running. 10 PCS. Packed properly.
Great product. Arrived ahead of time. Thank you
Parcel received shook cool all 10 pieces is not checked check unsubscribe
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