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SQ4153EY-T1_GE3

SQ4153EY-T1_GE3
Images are for reference only
Part Number
SQ4153EY-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
283 ns
Forward Transconductance - Min
54 S
Id - Continuous Drain Current
25 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
7.1 W
Product Type
MOSFET
Qg - Gate Charge
151 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
5.1 mOhms
Rise Time
168 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
310 ns
Typical Turn-On Delay Time
31 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
12 V
Vgs - Gate-Source Voltage
8 V
Vgs th - Gate-Source Threshold Voltage
900 mV

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Latest Reviews

Write Your Own Reivew
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
The goods are OK, thank you dealers.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
The timer is running. 10 PCS. Packed properly.
and whole all right. the features no more функционалу check.
More

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