U430

Images are for reference only
Part Number
U430
Categories
JFET
RoHS
Datasheet
Description
JFET JFET N-Channel -25V 30mA 500mW -150 Igss

Specifications

Categories
JFET
Configuration
Dual
Drain-Source Current at Vgs=0
30 mA
Forward Transconductance - Min
10 ms
Gate-Source Cutoff Voltage
- 4 V
Id - Continuous Drain Current
1 nA
Mounting Style
Through Hole
Package / Case
TO-78-8
Packaging
Bulk
Pd - Power Dissipation
500 mW (1/2 W)
Series
U430
Technology
SI
Transistor Polarity
N-Channel
Type
JFET
Vds - Drain-Source Breakdown Voltage
10 V
Vgs - Gate-Source Breakdown Voltage
- 25 V

Latest Reviews

Thanks for your feedback!

Quick delivery. Secure packing. Excellent product. Thank you

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Perfectly.

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

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