- Part Number
- IKQ50N120CT2XKSA1
- Categories
- IGBT Transistors
- RoHS
- Datasheet
- Description
- IGBT Transistors IGBT PRODUCTS
IKQ50N120CT2XKSA1
Images are for reference only
Specifications
- Categories
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 1.75 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 100 A
- Continuous Collector Current Ic Max
- 100 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO247-3-46
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 652 W
- Product Type
- IGBT Transistors
- Technology
- SI
- Unit Weight
Porduct Category
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Latest Reviews
goods very well received very good quality
Fabrice Cubaynes
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
Takes 8 days to Japan. Good!
Alex Fragkos
it is safe and sound all, thank you seller!
Arturo Madril
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
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