SQ3585EV-T1_GE3

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Part Number
SQ3585EV-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified

Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
8 ns, 14 ns
Forward Transconductance - Min
10 S, 3 S
Id - Continuous Drain Current
3.57 A, 2.5 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
TSOP-6
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Pd - Power Dissipation
1.67 W
Product Type
MOSFET
Qg - Gate Charge
2.5 nC, 3.5 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
49 mOhms, 140 mOhms
Rise Time
15 ns, 16 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel, P-Channel
Transistor Type
1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time
22 ns, 29 ns
Typical Turn-On Delay Time
9 ns, 7 ns
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
600 mV, 1.5 V

Latest Reviews

Properly packed, not damaged. Works well, voltage levels are stable. Recommend.

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Hello! Order received, very happy. Thank you very much!

Perfectly.

Goods came in two weeks. Well packed. Track number tracked

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