- Part Number
- IKP08N65H5XKSA1
- Categories
- IGBT Transistors
- RoHS
- Datasheet
- Description
- IGBT Transistors IGBT PRODUCTS
IKP08N65H5XKSA1
Images are for reference only
Specifications
- Categories
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 18 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO-220-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 70 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOP 5 H5
- Technology
- SI
- Tradename
- TRENCHSTOP
- Unit Weight
Porduct Category
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Latest Reviews
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
it is safe and sound all, thank you seller!
Arturo Madril
Everything is excellent! recommend this seller!
Stoyan Chaykov
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
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