IGP40N65F5XKSA1

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Specifications

Categories
IGBT Transistors
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.9 V
Configuration
Single
Continuous Collector Current at 25 C
74 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
250 W
Product Type
IGBT Transistors
Series
TRENCHSTOP 5 F5
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

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