- Part Number
- IKD04N60RFATMA1
- Categories
- IGBT Transistors
- RoHS
- Datasheet
- Description
- IGBT Transistors IGBT w/ INTG DIODE 600V 8A
IKD04N60RFATMA1
Images are for reference only
Specifications
- Categories
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 2.2 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 8 A
- Gate-Emitter Leakage Current
- 100 nA
- Height
- 2.41 mm
- Length
- 6.73 mm
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-252-3
- Packaging
- Reel
- Packaging
- Cut Tape
- Packaging
- MouseReel
- Part # Aliases
- Pd - Power Dissipation
- 75 W
- Product Type
- IGBT Transistors
- Series
- RC
- Technology
- SI
- Tradename
- TRENCHSTOP
- Width
- 6.22 mm
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Latest Reviews
Thank you very much! Very fast shipping. High quality. Very good seller.
Klimenko Yuriy Mihaylovich
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Paolo Giazzi
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Everything is excellent! recommend this seller!
Stoyan Chaykov
Shipping a little 1 weeks, normal packing, the procedure is complete.
dennis kraft
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