- Part Number
- IKP20N60H3
- Categories
- IGBT Transistors
- RoHS
- Datasheet
- Description
- IGBT Transistors 600V HI SPEED SW IGBT
IKP20N60H3
Images are for reference only
Specifications
- Categories
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.95 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 40 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO-220-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 170 W
- Product Type
- IGBT Transistors
- Series
- HighSpeed 3
- Technology
- SI
- Tradename
- TRENCHSTOP
- Unit Weight
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Latest Reviews
Teşekkürler
Ashir Hussain
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
Good material. Great seller, efficient and insurance. Ok
Janos More
Packed medium, in transit could поврелиться. But since it's safe, work perfectly
Matt Hookway
Excellent transaction five star service thank you, we will do business again.
Ashley Stovall
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