Part Number HD1750FX Categories Bipolar Transistors - BJT RoHS Datasheet HD1750FX Description Bipolar Transistors - BJT NPN High Voltage +800Vceo Max.
Categories Bipolar Transistors - BJT Collector- Emitter Voltage VCEO Max 800 V Configuration Single DC Collector/Base Gain hfe Min 30 Emitter- Base Voltage VEBO 10 V Height 16.5 mm Length 15.7 mm Maximum DC Collector Current 24 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case ISOWATT-218-3 Packaging Tube Pd - Power Dissipation 75000 mW Product Type BJTs - Bipolar Transistors Series HD1750FX Technology SI Transistor Polarity NPN Unit Weight Width 5.7 mm