DP0150ALP4-7

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Specifications

Categories
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
50 V
Collector- Emitter Voltage VCEO Max
50 V
Configuration
Single
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
120 at 2 mA, 6 V
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
80 MHz
Height
0.35 mm
Length
1 mm
Maximum DC Collector Current
0.1 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
DFN-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
450 mW
Product Type
BJTs - Bipolar Transistors
Series
DP0150
Technology
SI
Transistor Polarity
PNP
Width
0.6 mm

Latest Reviews

Very good!

Hello! Order received, very happy. Thank you very much!

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

Long Service and Russia!

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