Part Number DN350T05-7 Categories Bipolar Transistors - BJT RoHS Datasheet DN350T05-7 Description Bipolar Transistors - BJT NPN BIPOLAR
Categories Bipolar Transistors - BJT Collector- Base Voltage VCBO 350 V Collector- Emitter Voltage VCEO Max 350 V Collector-Emitter Saturation Voltage 1 V Configuration Single DC Collector/Base Gain hfe Min 15 at 100 mA, 10 V Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 50 MHz Height 1 mm Length 3.05 mm Maximum DC Collector Current 500 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SOT-23-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 300 mW Product Type BJTs - Bipolar Transistors Series DN350 Technology SI Transistor Polarity NPN Unit Weight Width 1.4 mm