DN350T05-7

Images are for reference only

Specifications

Categories
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
350 V
Collector- Emitter Voltage VCEO Max
350 V
Collector-Emitter Saturation Voltage
1 V
Configuration
Single
DC Collector/Base Gain hfe Min
15 at 100 mA, 10 V
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
50 MHz
Height
1 mm
Length
3.05 mm
Maximum DC Collector Current
500 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
300 mW
Product Type
BJTs - Bipolar Transistors
Series
DN350
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
1.4 mm

Latest Reviews

Teşekkürler

Received, Fast shipping, not checked yet

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Takes 8 days to Japan. Good!

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

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