VT6Z2T2R

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Specifications

Categories
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
50 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
0.1 V, - 0.15 V
Configuration
Dual
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
560 at - 1 mA, - 6 V
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
350 MHz, 300 MHz
Maximum DC Collector Current
200 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
VMT-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
150 mW
Product Type
BJTs - Bipolar Transistors
Series
VT6Z2
Technology
SI
Transistor Polarity
NPN, PNP

Latest Reviews

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