Part Number DNBT8105-7 Categories Bipolar Transistors - BJT RoHS Datasheet DNBT8105-7 Description Bipolar Transistors - BJT 1A
Categories Bipolar Transistors - BJT Collector- Base Voltage VCBO 80 V Collector- Emitter Voltage VCEO Max 60 V Collector-Emitter Saturation Voltage 500 mV Configuration Single DC Collector/Base Gain hfe Min 30 at 2 A, 5 V Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 150 MHz Height 1 mm Length 2.9 mm Maximum DC Collector Current 2 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SOT-23-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 300 mW Product Type BJTs - Bipolar Transistors Series DNBT8 Technology SI Transistor Polarity NPN Unit Weight Width 1.3 mm