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TK12P60W,RVQ

TK12P60W,RVQ
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Part Number
TK12P60W,RVQ
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET DTMOSIV 600V 340mOhm 115A 100W 890pF 25nC
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Specifications

Categories
MOSFET
Configuration
Single
Fall Time
5.5 ns
Height
2.3 mm
Id - Continuous Drain Current
11.5 A
Length
6.5 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Pd - Power Dissipation
100 W
Product Type
MOSFET
Qg - Gate Charge
25 nC
Rds On - Drain-Source Resistance
340 mOhms
Rise Time
23 ns
Series
TK12P60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
85 ns
Typical Turn-On Delay Time
45 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
5.5 mm

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Latest Reviews

Write Your Own Reivew
Teşekkürler
Quick delivery. Secure packing. Excellent product. Thank you
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
packed pretty good, all is ok,-seller.
Thank You all fine, packed very well
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