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TK10Q60W,S1VQ

TK10Q60W,S1VQ
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Part Number
TK10Q60W,S1VQ
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5.5 ns
Height
6.1 mm
Id - Continuous Drain Current
9.7 A
Length
6.65 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-251-3
Pd - Power Dissipation
80 W
Product Type
MOSFET
Qg - Gate Charge
20 nC
Rds On - Drain-Source Resistance
327 mOhms
Rise Time
22 ns
Series
TK10Q60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
75 ns
Typical Turn-On Delay Time
45 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
2.3 mm

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Latest Reviews

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thanks for resending, this item is good !
everything as it is written in the description of the same deductible prodovtsu deserved
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Hello! Order received, very happy. Thank you very much!
packed pretty good, all is ok,-seller.
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