Part Number QH8MA3TCR Categories MOSFET RoHS Datasheet QH8MA3TCR Description MOSFET 30V N+P Ch MOSFET
Categories MOSFET Channel Mode Enhancement Configuration Dual Fall Time 5.7 ns, 20 ns Forward Transconductance - Min 2.7 S, 3.3 S Id - Continuous Drain Current 7 A, 5.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case TSMT-8 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 2.5 W Product Type MOSFET Qg - Gate Charge 7.2 nC, 10 nC Rds On - Drain-Source Resistance 22 mOhms, 37 mOhms Rise Time 8 ns, 12 ns Technology SI Transistor Polarity N-Channel, P-Channel Transistor Type 1 N-Channel, 1 P-Channel Typical Turn-Off Delay Time 12 ns, 40 ns Typical Turn-On Delay Time 7.2 ns, 8 ns Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1 V, 2.5 V