QH8MA3TCR

Images are for reference only
Part Number
QH8MA3TCR
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET 30V N+P Ch MOSFET

Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
5.7 ns, 20 ns
Forward Transconductance - Min
2.7 S, 3.3 S
Id - Continuous Drain Current
7 A, 5.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
TSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
2.5 W
Product Type
MOSFET
Qg - Gate Charge
7.2 nC, 10 nC
Rds On - Drain-Source Resistance
22 mOhms, 37 mOhms
Rise Time
8 ns, 12 ns
Technology
SI
Transistor Polarity
N-Channel, P-Channel
Transistor Type
1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time
12 ns, 40 ns
Typical Turn-On Delay Time
7.2 ns, 8 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V, 2.5 V

Latest Reviews

Hello! Order received, very happy. Thank you very much!

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

Shipping a little 1 weeks, normal packing, the procedure is complete.

The timer is running. 10 PCS. Packed properly.

Seems well have not tested

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