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TK12Q60W,S1VQ

TK12Q60W,S1VQ
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Part Number
TK12Q60W,S1VQ
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET DTMOSIV 600V 340mOhm 11.5A 100W 890pF
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Specifications

Categories
MOSFET
Configuration
Single
Fall Time
5.5 ns
Height
6.1 mm
Id - Continuous Drain Current
11.5 A
Length
6.65 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-251-3
Packaging
Reel
Pd - Power Dissipation
100 W
Product Type
MOSFET
Qg - Gate Charge
25 nC
Rds On - Drain-Source Resistance
265 mOhms
Rise Time
23 ns
Series
TK12Q60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
85 ns
Typical Turn-On Delay Time
45 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
2.3 mm

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Latest Reviews

Write Your Own Reivew
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Hello! Order received, very happy. Thank you very much!
Thank You all fine, packed very well
High Quality driver, works excellent. It came to Moscow for 7 days.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
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