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TK17N65W,S1F

TK17N65W,S1F
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Part Number
TK17N65W,S1F
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET Power MOSFET N-Channel
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
6 ns
Height
20.95 mm
Id - Continuous Drain Current
17.3 A
Length
15.94 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Tube
Pd - Power Dissipation
165 W
Product Type
MOSFET
Qg - Gate Charge
45 nC
Rds On - Drain-Source Resistance
170 mOhms
Rise Time
15 ns
Series
TK17N65W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
5.02 mm

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Latest Reviews

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Thanks for your feedback!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Perfectly.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Works. Find the price of this product is very good
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