F20W60C3-7100

Images are for reference only
Part Number
F20W60C3-7100
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET Hi Switching Speed High Voltage

Specifications

Categories
MOSFET
Fall Time
60 ns
Forward Transconductance - Min
8.7 S
Id - Continuous Drain Current
20 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
MTO-3P-3
Packaging
Tube
Pd - Power Dissipation
75 W
Product Type
MOSFET
Qg - Gate Charge
87 nC
Rds On - Drain-Source Resistance
190 mOhms
Rise Time
60 ns
Technology
SI
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
355 ns
Typical Turn-On Delay Time
32 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V

Latest Reviews

Very good!

all exactly and work. радиолюбителя useful set to, thank you)

Quickly came to CET, all in one package. Look at the rules

packed pretty good, all is ok,-seller.

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

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