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TK20N60W5,S1VF

TK20N60W5,S1VF
Images are for reference only
Part Number
TK20N60W5,S1VF
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET Power MOSFET N-Channel
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
6 ns
Height
20.95 mm
Id - Continuous Drain Current
20 A
Length
15.94 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Tube
Pd - Power Dissipation
165 W
Product Type
MOSFET
Qg - Gate Charge
55 nC
Rds On - Drain-Source Resistance
150 mOhms
Rise Time
45 ns
Series
TK20N60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
90 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3 V
Width
5.02 mm

Porduct Category

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Latest Reviews

Write Your Own Reivew
all exactly and work. радиолюбителя useful set to, thank you)
Hello! Order received, very happy. Thank you very much!
High Quality driver, works excellent. It came to Moscow for 7 days.
Goods came in two weeks. Well packed. Track number tracked
Shipping a little 1 weeks, normal packing, the procedure is complete.
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