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VN0550N3-G-P013

VN0550N3-G-P013
Images are for reference only
Part Number
VN0550N3-G-P013
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET N-CH Enhancmnt Mode MOSFET
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Height
5.33 mm
Id - Continuous Drain Current
50 mA
Length
5.21 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Ammo Pack
Pd - Power Dissipation
1 W
Product
MOSFET Small Signal
Product Type
MOSFET
Rds On - Drain-Source Resistance
45 Ohms
Rise Time
15 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
10 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
500 V
Vgs - Gate-Source Voltage
20 V
Width
4.19 mm

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Latest Reviews

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everything as it is written in the description of the same deductible prodovtsu deserved
Decent quality, not минвелл certainly, but enough decent
Goods came in two weeks. Well packed. Track number tracked
Looks good
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
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