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TK10A80E,S4X

TK10A80E,S4X
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Part Number
TK10A80E,S4X
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
35 ns
Height
15 mm
Id - Continuous Drain Current
10 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Pd - Power Dissipation
50 W
Product Type
MOSFET
Qg - Gate Charge
46 nC
Rds On - Drain-Source Resistance
700 mOhms
Rise Time
40 ns
Series
TK10A80E
Technology
SI
Tradename
MOSVIII
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
140 ns
Typical Turn-On Delay Time
80 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
4 V
Width
4.5 mm

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Latest Reviews

Write Your Own Reivew
Empresa muy seria , el envió llego como veis en las fotos de manera muy segura , todos los componentes son de gran calidad , aconsejo TNT frente a DHL como compa?ía para el envió .
Yes, they are all here. :)
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Everything is fine!
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