RQ3G100GNTB

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Part Number
RQ3G100GNTB
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET Nch 40V 10A Power MOSFET

Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
3.2 ns
Id - Continuous Drain Current
10 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
8.4 nC
Rds On - Drain-Source Resistance
11 mOhms
Rise Time
4.2 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
23.1 ns
Typical Turn-On Delay Time
8 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
40 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.2 V

Latest Reviews

Properly packed, not damaged. Works well, voltage levels are stable. Recommend.

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Takes 8 days to Japan. Good!

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

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