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TK16G60W,RVQ

TK16G60W,RVQ
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Part Number
TK16G60W,RVQ
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF
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Specifications

Categories
MOSFET
Configuration
Single
Fall Time
5 ns
Height
10.4 mm
Id - Continuous Drain Current
15.8 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-262-3
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Pd - Power Dissipation
130 W
Product Type
MOSFET
Qg - Gate Charge
38 nC
Rds On - Drain-Source Resistance
190 mOhms
Rise Time
25 ns
Series
TK16G60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
4.5 mm

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