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SQ4532AEY-T1_GE3

SQ4532AEY-T1_GE3
Images are for reference only
Part Number
SQ4532AEY-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
19 ns, 16 ns
Forward Transconductance - Min
22 S, 5.5 S
Id - Continuous Drain Current
7.3 A, 5.3 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3.3 W, 3.3 W
Product Type
MOSFET
Qg - Gate Charge
5.9 nC, 7.9 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
21 mOhms, 56 mOhms
Rise Time
17 ns, 17 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel, P-Channel
Transistor Type
1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time
10 ns, 19 ns
Typical Turn-On Delay Time
7 ns, 6 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V, 2.5 V

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