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TK10A60D(STA4,Q,M)

TK10A60D(STA4,Q,M)
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Part Number
TK10A60D(STA4,Q,M)
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET MOSFET N-ch 600V 10A
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
15 ns
Forward Transconductance - Min
1.5 s
Height
15 mm
Id - Continuous Drain Current
10 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220SIS-3
Pd - Power Dissipation
45 W
Product Type
MOSFET
Qg - Gate Charge
25 nC
Rds On - Drain-Source Resistance
750 mOhms
Rise Time
22 ns
Series
TK10A60D
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
Field Effect Transistor Silicon N Channel MOS Type
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
55 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
2 V
Width
4.5 mm

Porduct Category

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Latest Reviews

Write Your Own Reivew
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Takes 8 days to Japan. Good!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
The timer is running. 10 PCS. Packed properly.
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