Part Number SQ7415AENW-T1_GE3 Categories MOSFET RoHS Datasheet SQ7415AENW-T1_GE3 Description MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
Categories MOSFET Channel Mode Enhancement Configuration Single Fall Time 8 ns Forward Transconductance - Min 13 S Height 1.04 mm Id - Continuous Drain Current 16 A Length 3.3 mm Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case PowerPAK-1212-8 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 53 W Product Type MOSFET Qg - Gate Charge 38 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 50 MOhms Rise Time 9 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 37 ns Typical Turn-On Delay Time 9 ns Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V Width 3.3 mm