QH8KA1TCR

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Part Number
QH8KA1TCR
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET 30V Nch+Nch Si MOSFET

Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
3.5 ns, 3.5 ns
Forward Transconductance - Min
1.7 S, 1.7 S
Id - Continuous Drain Current
4.5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
TSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
2.4 W
Product Type
MOSFET
Qg - Gate Charge
3 nC, 3 nC
Rds On - Drain-Source Resistance
56 mOhms, 56 mOhms
Rise Time
7.5 ns, 7.5 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
10 ns, 10 ns
Typical Turn-On Delay Time
5 ns, 5 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V

Latest Reviews

everything as it is written in the description of the same deductible prodovtsu deserved

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goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Everything is fine!

I received the product right, thank you very much 2018/12/03 ★★★★★

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