Part Number QH8KA1TCR Categories MOSFET RoHS Datasheet QH8KA1TCR Description MOSFET 30V Nch+Nch Si MOSFET
Categories MOSFET Channel Mode Enhancement Configuration Dual Fall Time 3.5 ns, 3.5 ns Forward Transconductance - Min 1.7 S, 1.7 S Id - Continuous Drain Current 4.5 A Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case TSMT-8 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 2.4 W Product Type MOSFET Qg - Gate Charge 3 nC, 3 nC Rds On - Drain-Source Resistance 56 mOhms, 56 mOhms Rise Time 7.5 ns, 7.5 ns Technology SI Transistor Polarity N-Channel Transistor Type 2 N-Channel Typical Turn-Off Delay Time 10 ns, 10 ns Typical Turn-On Delay Time 5 ns, 5 ns Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1 V