Part Number TK10A80W,S4X Categories MOSFET RoHS Datasheet TK10A80W,S4X Description MOSFET N-Ch 800V 1150pF 19nC 9.5A 40W
Categories MOSFET Channel Mode Enhancement Configuration Single Fall Time 10 ns Id - Continuous Drain Current 9.5 A Maximum Operating Temperature + 150 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220SIS-3 Pd - Power Dissipation 40 W Product Type MOSFET Qg - Gate Charge 19 nC Rds On - Drain-Source Resistance 460 mOhms Rise Time 35 ns Series TK10A80W Technology SI Tradename DTMOSIV Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 120 ns Typical Turn-On Delay Time 65 ns Unit Weight Vds - Drain-Source Breakdown Voltage 800 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 3 V